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Transistors

RF Energy

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for RF Energy applications – operable in 915MHz, 2.45GHz, 5.8GHz with power levels capable up to 1kw.

Part Number            DatasheetMin Freq (MHz)Max Freq (MHz)Output Power (W)Power Gain (dB)Drain Efficiency (%)VDCPackage Type
IE24100P2400250010014.87250Flange
IE24150P2400250015013.373.350Flange
IE24200P2400250020013.874.950Flange
IE24300P2400250030012.371.250Flange
ID24330WD2500250034713.547.248Flange
IE13550D1295130555014.979.250Flange
IE09150PC90093015017.683.150Flange
IE09300PC9009303001880.250Flange
ET43014P-60001415.568.250Flange
ET43028P-6000281668.850Flange
ET43055P-60005513.472.650Flange