RFHIC's extensive portfolio of gallium nitride (GaN) on silicon carbide (SiC) RF transistors designed for high-power RF Energy applications. Supporting frequency ranges DC to 6000 GHz and power up to 1,000 W.
RFHIC's extensive portfolio of gallium nitride (GaN) on silicon carbide (SiC) RF transistors designed for wireless infrastructure applications, 4G LTE, 5G, macro base stations, small cells, and more.
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